STD830CP20
STD830CP20 is Complementary transistor pair manufactured by STMicroelectronics.
Features
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Low VCE(sat) Simplified circuit design Reduced ponent count Low spread of dynamic parameters
8 4 1
Applications
- pact fluorescent lamp (CFL) 110 V mains
DIP-8
Description
The STD830CP20 is a hybrid plementary pair of power bipolar transistors manufactured by using the high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. The STD830CP20 is housed in dual island DIP-8 package with separated terminals for higher assembly flexibility, specifically remended to be used in a new solution for pact fluorescent lamp (CFL). Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking D830CP20 Package DIP-8 Packing Tube
Order code STD830CP20
May 2009
Doc ID 15762 Rev 1
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
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Electrical ratings
Absolute maximum ratings
Value Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Ptot Tstg TJ Parameter NPN Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, Ib = 1.5 A, tp < 10 ms) Collector current Collector peak current (t P < 5 ms) Base current Base peak current (t P < 1 ms) Total dissipation at Tamb = 25 °C single transistor Total dissipation at Tamb = 25 °C both transistors Storage temperature Max. operating junction temperature 400 200 V(BR)EBO 3 6 1.5 3 TBD TBD -65 to 150 150 PNP 300 V V V A A A A W W °C °C Unit
Table 2.
Table 3.
Symbol
Thermal data
Parameter Value TBD TBD Unit °C/W °C/W
Rthj-amb(1) Thermal resistance junction-ambient (Single transistor) Rthj-amb
(1)
Thermal resistance junction-ambient (Both transistors)
1. When mounted on 1 inch square pad of 2 oz. copper, t ≤ 10 sec.
Note:
For PNP types voltage and current values are negative
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Doc ID 15762 Rev 1
Electrical characteristics
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